The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

Jan. 13, 2011
Applicants:

Takashi Ishigaki, Hino, JP;

Takayuki Kawahara, Higashiyamato, JP;

Riichiro Takemura, Tokyo, JP;

Kazuo Ono, Hachioji, JP;

Kenchi Ito, Kunitachi, JP;

Inventors:

Takashi Ishigaki, Hino, JP;

Takayuki Kawahara, Higashiyamato, JP;

Riichiro Takemura, Tokyo, JP;

Kazuo Ono, Hachioji, JP;

Kenchi Ito, Kunitachi, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01L 29/82 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); G11C 11/16 (2013.01); G11C 11/5607 (2013.01); H01L 29/82 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01);
Abstract

There is provided a magnetic memory with using a magnetoresistive effect element of a spin-injection magnetization reversal type, in which a multi-value operation is possible and whose manufacturing and operation are simple. A preferred aim of this is solved by providing two or more magnetoresistive effect elements which are electrically connected in series to each other and by selecting one of the series-connected elements depending on a direction of a current carried in the series-connected elements, a magnitude thereof, and an order of the current thereof for performing the writing operation. For example, it is solved by differentiating plane area sizes of the respective magnetoresistive effect elements which have the same film structure from each other so as to differentiate resistance change amounts caused by respective magnetization reversal and threshold current values required for respective magnetization reversal from each other.


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