The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Dec. 23, 2013
Canon Kabushiki Kaisha, Tokyo, JP;
Toru Koizumi, Yokohama, JP;
Shigetoshi Sugawa, Atsugi, JP;
Isamu Ueno, Tokyo, JP;
Tetsunobu Kochi, Hiratsuka, JP;
Katsuhito Sakurai, Tokyo, JP;
Hiroki Hiyama, Atsugi, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
A method of manufacturing an active pixel sensor having a plurality of pixels, each of the pixels having a photodiode formed by a part of a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type, and a transfer transistor for transferring a charge carrier from the photodiode, includes the steps of preparing a substrate on which the first semiconductor region of the first conductive type is formed, forming a mask to form the second semiconductor region on the substrate, forming the second semiconductor region using the mask, and forming a gate of the transferring transistor after forming the second semiconductor region. The gate of the transferring transistor overlaps the second semiconductor region in a planar view.