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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9257448 B1

PDFFull Text
Expired
Date of Patent:
Feb. 09, 2016

Filed:

Jun. 09, 2014

Integrated semiconductor device having an insulating structure and a manufacturing method

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Matthias Stecher, Munich, DE;

Hans Weber, Bayerisch Gmain, DE;

Lincoln O'Riain, Dresden, DE;

Birgit von Ehrenwall, Radebeul, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Dicke, Billig & Czaja, PLLC

Primary Examiner:

Stephen W Smoot

Assistant Examiner:

Sun M Kim

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 21/18 (2006.01); H01L 21/74 (2006.01); H01L 21/762 (2006.01); H01L 27/02 (2006.01); H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1207 (2013.01); H01L 21/187 (2013.01); H01L 21/743 (2013.01); H01L 21/76283 (2013.01); H01L 27/0251 (2013.01); H01L 27/1203 (2013.01); H01L 29/04 (2013.01); H01L 29/1087 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01); H01L 29/0878 (2013.01);
Abstract

An integrated semiconductor device is provided. The integrated semiconductor device has a first semiconductor region of a second conductivity type, a second semiconductor region of a first conductivity type forming a pn-junction with the first semiconductor region, a non-monocrystalline semiconductor layer of the first conductivity type arranged on the second semiconductor region, a first well and at least one second well of the first conductivity type arranged on the non-monocrystalline semiconductor layer and an insulating structure insulating the first well from the at least one second well and the non-monocrystalline semiconductor layer. Further, a method for forming a semiconductor device is provided.

Find Patent Forward Citations

Stecher, Matthias. (2016). Integrated semiconductor device having an insulating structure and a manufacturing method (U.S. Patent No. 9257448). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9257448

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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