The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

Oct. 02, 2014
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Seo Hyun Lee, Seoul, KR;

Byung Soo Park, Gyeonggi-do, KR;

Sang Hyun Oh, Gyeonggi-do, KR;

Sun Mi Park, Gyeongbuk, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 29/7926 (2013.01);
Abstract

A three dimensional (3-D) non-volatile memory device includes a pipe gate including a first pipe gate, a second pipe gate formed on the first pipe gate, and a first interlayer insulating layer interposed between the first pipe gate and the second pipe gate, word lines alternately stacked with second interlayer insulating layers on the pipe gate, a pipe channel buried within the pipe gate, and memory cell channels coupled to the pipe channel and arranged to pass through the word lines and the second interlayer insulating layers.


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