The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Jun. 26, 2014
Applicant:
Seiko Epson Corporation, Tokyo, JP;
Inventors:
Tsuyoshi Yoda, Matsumoto, JP;
Kazumi Hara, Suwa, JP;
Assignee:
Seiko Epson Corporation, , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 23/00 (2006.01); H01L 21/683 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 24/13 (2013.01); H01L 21/6835 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 24/11 (2013.01); H01L 24/12 (2013.01); H01L 24/16 (2013.01); H01L 24/90 (2013.01); H01L 2224/13009 (2013.01); H01L 2224/13099 (2013.01); H01L 2224/73103 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/83194 (2013.01); H01L 2224/83856 (2013.01); H01L 2224/90 (2013.01); H01L 2924/00013 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01024 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01072 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01075 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/09701 (2013.01); H01L 2924/14 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/15788 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate and a through electrode provided in a through hole formed in the semiconductor substrate. The through electrode partially protrudes from a back surface of the semiconductor substrate, which is opposite to an active surface thereof. The through electrode includes a resin core and a conductive film covering at least a part of the resin core.