The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Nov. 26, 2008
Christopher Paul Daigler, Painted Post, NY (US);
Kishor Purushottam Gadkaree, Big Flats, NY (US);
Joseph Frank Mach, Lindley, NY (US);
Steven Alvin Tietje, Lindley, NY (US);
Christopher Paul Daigler, Painted Post, NY (US);
Kishor Purushottam Gadkaree, Big Flats, NY (US);
Joseph Frank Mach, Lindley, NY (US);
Steven Alvin Tietje, Lindley, NY (US);
Corning Incorporated, Corning, NY (US);
Abstract
Methods and apparatus for forming a semiconductor on glass-ceramic structure provide for: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a precursor glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer to thereby form an intermediate semiconductor on precursor glass structure; sandwiching the intermediate semiconductor on precursor glass structure between first and second support structures; applying pressure to one or both of the first and second support structures; and subjecting the intermediate semiconductor on precursor glass structure to heat-treatment step to crystallize the precursor glass resulting in the formation of a semiconductor on glass-ceramic structure.