The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

Oct. 16, 2014
Applicant:

Ngk Insulators, Ltd., Nagoya, JP;

Inventors:

Asumi Jindo, Okazaki, JP;

Katsuhiro Inoue, Ama-Gun, JP;

Yuji Katsuda, Tsushima, JP;

Takashi Kataigi, Handa, JP;

Shingo Amano, Chita-Gun, JP;

Hiroya Sugimoto, Chiryu, JP;

Assignee:

NGK Insulators, Ltd., Nagoya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 31/02 (2006.01); C04B 35/653 (2006.01); B32B 9/06 (2006.01); B32B 15/04 (2006.01); B32B 15/00 (2006.01); F28F 7/00 (2006.01); F28D 15/00 (2006.01); H01L 21/67 (2006.01); B32B 9/00 (2006.01); C04B 35/56 (2006.01); C04B 35/575 (2006.01); C04B 35/626 (2006.01); C04B 37/00 (2006.01); B21D 53/02 (2006.01); B32B 37/10 (2006.01); B32B 38/00 (2006.01); H01L 21/683 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67109 (2013.01); B21D 53/02 (2013.01); B32B 9/005 (2013.01); B32B 37/10 (2013.01); B32B 38/0012 (2013.01); C04B 35/5615 (2013.01); C04B 35/575 (2013.01); C04B 35/62635 (2013.01); C04B 37/006 (2013.01); H01L 21/6833 (2013.01); B32B 2311/00 (2013.01); B32B 2311/24 (2013.01); B32B 2315/02 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/3843 (2013.01); C04B 2235/3891 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5472 (2013.01); C04B 2235/656 (2013.01); C04B 2235/77 (2013.01); C04B 2235/80 (2013.01); C04B 2235/96 (2013.01); C04B 2235/9607 (2013.01); C04B 2237/365 (2013.01); C04B 2237/366 (2013.01); C04B 2237/402 (2013.01); C04B 2237/708 (2013.01); H01L 21/6831 (2013.01); H01L 21/68757 (2013.01);
Abstract

A member for a semiconductor manufacturing apparatus includes an AlN electrostatic chuck, a cooling plate, and a cooling plate-chuck bonding layer. The cooling plate includes first to third substrates, a first metal bonding layer between the first and second substrates, a second metal bonding layer between the second and third substrates, and a refrigerant path. The first to third substrates are formed of a dense composite material containing SiC, TiSiC, and TiC. The metal bonding layers are formed by thermal compression bonding of the substrates with an Al—Si—Mg metal bonding material interposed between the first and second substrates and between the second and third substrates.


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