The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

Oct. 24, 2014
Applicant:

Magnachip Semiconductor, Ltd., Cheongju-si, KR;

Inventors:

Yunseong Chang, Cheongju-si, KR;

Yangbeom Kang, Cheongju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 21/3213 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 27/115 (2006.01); H01L 29/423 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); H01L 21/02164 (2013.01); H01L 21/28273 (2013.01); H01L 21/31144 (2013.01); H01L 27/11521 (2013.01); H01L 27/11541 (2013.01); H01L 29/42328 (2013.01); H01L 29/42324 (2013.01); H01L 29/788 (2013.01);
Abstract

A method for manufacturing a non-volatile memory includes depositing a first conductive film and a protective film on a substrate including a logic area and a cell area, patterning the protective film, depositing a hard mask layer on the first conductive film and the patterned protective film to pattern the hard mask layer, using the patterned hard mask layer to form a logic gate on the logic area, exposing a surface of the first conductive film in the cell area and forming a control gate on the cell area.


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Chang, Yunseong. (2016). Method of manufacturing non-volatile memory device (U.S. Patent No. 9257304). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9257304

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