The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Feb. 27, 2014
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Inventor:
Tomonori Aoyama, Mie-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-Ku, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/027 (2006.01); C23C 16/18 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); C23C 16/18 (2013.01); H01L 21/0271 (2013.01); H01L 21/31144 (2013.01);
Abstract
According to one embodiment, a method of manufacturing a semiconductor device includes forming a resist and a layer to be etched on a substrate, forming a non-cured layer on the resist by supplying a metal compound containing Ru, forming a cured layer on a surface layer of the resist by using the non-cured layer, and etching the layer to be etched by reactive ion etching using the cured layer and the resist as a mask.