The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Nov. 18, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventor:
Byoung-Yong Gwak, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/461 (2006.01); H01L 21/308 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 45/00 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01); H01L 27/108 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 21/308 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 27/228 (2013.01); H01L 27/2436 (2013.01); H01L 27/2472 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/10 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 27/10852 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract
A method of forming a fine pattern includes forming first line mask patterns on a mask layer to extend along a direction, forming second line mask patterns to extend along a diagonal direction with respect to the first line mask patterns, anisotropically etching the mask layer exposed by the first and second line mask patterns to form elliptical openings, and isotropically etching the mask layer provided with the openings to form a mask pattern with enlarged openings.