The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Sep. 09, 2013
Samsung Display Co., Ltd., Yongin, Gyeonggi-do, KR;
Maidanchuk Ivan, Yongin, KR;
Byung-Soo So, Yongin, KR;
Dong-Hyun Lee, Yongin, KR;
Won-Pil Lee, Yongin, KR;
Samsung Display Co., Ltd., Yongin-si, KR;
Abstract
A method and system for monitoring crystallization of an amorphous silicon (a-Si) thin film, and a method of manufacturing a thin film transistor (TFT) by using the method and system are disclosed. The method of monitoring the crystallization of the a-Si thin film includes: irradiating light from a light source onto a monitoring a-Si thin film to anneal the monitoring a-Si thin film; annealing the monitoring a-Si thin film and concurrently measuring a Raman scattering spectrum of light scattered by the monitoring a-Si thin film at set time intervals; and calculating a crystallization characteristic value of the monitoring a-Si thin film based on the Raman scattering spectrum.