The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

May. 01, 2014
Applicants:

Douglas C. Heiderman, Akron, NY (US);

Ashwini K. Sinha, East Amherst, NY (US);

Lloyd A. Brown, Amherst, NY (US);

Inventors:

Douglas C. Heiderman, Akron, NY (US);

Ashwini K. Sinha, East Amherst, NY (US);

Lloyd A. Brown, Amherst, NY (US);

Assignee:

Praxair Technology, Inc., Danbury, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); C23C 14/00 (2006.01); F17C 1/00 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01L 21/265 (2013.01); C23C 14/00 (2013.01); F17C 1/00 (2013.01); H01J 37/3171 (2013.01); H01J 2237/08 (2013.01); Y10T 137/7781 (2015.04);
Abstract

A novel method for ion implanting isotopically enriched selenium containing source material is provided. The source material is selected and enriched in a specific mass isotope of selenium, whereby the enrichment is above natural abundance levels. The inventive method allows reduced gas consumption and reduced waste. The source material is preferably stored and delivered from a sub-atmospheric storage and delivery device to enhance safety and reliability during the selenium ion implantation process.


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