The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

Jan. 14, 2013
Applicant:

Crystal Solar, Incorporated, Santa Clara, CA (US);

Inventor:

Kramadhati V. Ravi, Atherton, CA (US);

Assignee:

Crystal Solar, Incorporated, Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/66 (2006.01); H01L 21/203 (2006.01); H01L 31/20 (2006.01); H01L 21/314 (2006.01); H01L 31/0224 (2006.01); H01L 31/0747 (2012.01); H01L 31/18 (2006.01); H01L 31/056 (2014.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 21/2033 (2013.01); H01L 21/3147 (2013.01); H01L 31/022425 (2013.01); H01L 31/056 (2014.12); H01L 31/0747 (2013.01); H01L 31/1892 (2013.01); H01L 31/202 (2013.01); H01L 33/22 (2013.01); Y02E 10/52 (2013.01);
Abstract

Methods are described for fabricating HIT solar cells, including double heterojunction and hybrid heterojunction-homojunction solar cells, with very thin single crystal silicon wafers, where the silicon wafer may be less than 80 microns thick, and even less than 50 microns thick. The methods overcome potential issues with handling these very thin wafers by using a process including epitaxial silicon deposition on a growth substrate, partial cell fabrication, attachment to a support substrate and then separation from the growth substrate. Some embodiments of the present invention may include a solar cell device architecture comprising the combination of a heterostructure on the front side of the device with a homojunction at the rear of the device. Furthermore, device performance may be enhanced by including a dielectric stack on the backside of the device for reflecting long wavelength infrared radiation.


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