The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

Aug. 09, 2012
Applicants:

Chen-chung Liu, Hsinchu, TW;

Ian-chun Cheng, Miaoli County, TW;

Inventors:

Chen-Chung Liu, Hsinchu, TW;

Ian-Chun Cheng, Miaoli County, TW;

Assignee:

CYNTEC CO., Ltd., Hsinchu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03H 7/01 (2006.01); H05K 1/16 (2006.01); H05K 13/00 (2006.01); H01F 17/00 (2006.01); H01F 19/04 (2006.01);
U.S. Cl.
CPC ...
H01F 17/0013 (2013.01); H01F 19/04 (2013.01); H01F 2017/002 (2013.01); Y10T 29/49117 (2015.01);
Abstract

The invention discloses a high-frequency device having a through-hole via inductor in a substrate. The through-hole via inductor has an integral body. The inductance of the through-hole via inductor is greater than that of the horizontal inductor. The through-hole via inductor comprises at least two materials, wherein one of said at least two materials is a conductive material. The present invention also discloses a method for manufacturing the structure of the high-frequency device, wherein the method mainly includes via-drilling and via-filling in the substrate, and lithography process on the substrate.


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