The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Mar. 22, 2012
Applicants:
Taesung Lee, Seoul, KR;
Jaewoo Im, Hwaseong-si, KR;
Inventors:
Taesung Lee, Seoul, KR;
Jaewoo Im, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); G11C 16/28 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); G11C 16/26 (2013.01); G11C 16/28 (2013.01); G11C 2213/71 (2013.01);
Abstract
An output circuit of a nonvolatile memory device includes a sense amplification circuit configured to, during a sensing operation, generate output data based on a comparison between a first voltage on a data line and a reference voltage on a reference data line during a sensing operation, the first voltage corresponding to data read from at least one memory cell, and the sense amplification circuit being further configured to connect the reference data line with a ground terminal during the sensing operation.