The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Sep. 10, 2014
Applicant:
Katsuyuki Fujita, Seoul, KR;
Inventor:
Katsuyuki Fujita, Seoul, KR;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 11/14 (2006.01); G11C 7/04 (2006.01); G11C 11/02 (2006.01); G11C 29/44 (2006.01); G11C 11/56 (2006.01); G11C 7/08 (2006.01); G11C 16/26 (2006.01); G11C 13/00 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 11/1673 (2013.01); G11C 29/44 (2013.01); G11C 7/04 (2013.01); G11C 7/08 (2013.01); G11C 11/16 (2013.01); G11C 11/5607 (2013.01); G11C 13/004 (2013.01); G11C 16/26 (2013.01); G11C 2029/0411 (2013.01);
Abstract
According to one embodiment, a resistance change memory comprises a memory cell array, a write and read circuit, a temperature sensor, and a memory controller. The memory cell array comprises memory cells including magnetic tunnel junction (MTJ) elements. The write and read circuit performs a write operation and a read operation for the memory cells. The temperature sensor outputs temperature information corresponding to a temperature of the memory cell array. The memory controller controls the write operation and the read operation by the write and read circuit in accordance with the temperature information.