The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

Nov. 04, 2011
Applicants:

Haiming Yu, Pleasanton, CA (US);

Wei Zhang, San Jose, CA (US);

Hao-yuan Howard Chou, San Jose, CA (US);

Ray Ruey-hsien HU, Milpitas, CA (US);

Inventors:

Haiming Yu, Pleasanton, CA (US);

Wei Zhang, San Jose, CA (US);

Hao-Yuan Howard Chou, San Jose, CA (US);

Ray Ruey-Hsien Hu, Milpitas, CA (US);

Assignee:

Altera Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 1/00 (2006.01); G06F 1/32 (2006.01);
U.S. Cl.
CPC ...
G06F 1/3203 (2013.01);
Abstract

Integrated circuits with memory elements are provided. Data may be loaded into the memory elements using write driver circuitry. The write driver circuitry may be provided with a fixed positive power supply voltage and an time-varying ground power supply voltage that is less than the positive power supply voltage. The time-varying ground power supply voltage may be generated using programmable power supply circuitry. The programmable power supply circuitry may include a pulse generation circuit and a configurable capacitive circuit. The pulse generation circuit may output a pulse signal to the capacitive circuit. In response to receiving the pulse signal, the capacitive circuit may push the time-varying ground power supply voltage to a negative value. The time-varying ground power supply voltage may be driven below zero volts for at least a portion of a write cycle to help improve write margins and increase memory yield.


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