The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

Mar. 08, 2013
Applicant:

Ut-battelle, Llc, Oak Ridge, TN (US);

Inventors:

Boyd Mccutchen Evans, III, Oak Ridge, TN (US);

Roger A. Kisner, Knoxville, TN (US);

Gail Mackiewicz Ludtka, Oak Ridge, TN (US);

Gerard Michael Ludtka, Oak Ridge, TN (US);

Alexander M. Melin, Knoxville, TN (US);

Donald M. Nicholson, Oak Ridge, TN (US);

Chad M. Parish, Knoxville, TN (US);

Orlando Rios, Knoxville, TN (US);

Athena S. Sefat, Oak Ridge, TN (US);

David L. West, Oak Ridge, TN (US);

John B. Wilgen, Oak Ridge, TN (US);

Assignee:

UT-Battelle, LLC, Oak Ridge, TN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 11/00 (2006.01); H01F 1/01 (2006.01); C22C 38/06 (2006.01); C22C 38/08 (2006.01); C22C 38/10 (2006.01); C30B 11/02 (2006.01); C30B 29/52 (2006.01); C30B 30/04 (2006.01);
U.S. Cl.
CPC ...
C30B 11/003 (2013.01); C30B 11/02 (2013.01); C30B 29/52 (2013.01); C30B 30/04 (2013.01); H01F 1/015 (2013.01);
Abstract

A method of making a single crystal comprises heating a material comprising magnetic anisotropy to a temperature T sufficient to form a melt of the material. A magnetic field of at least about 1 Tesla is applied to the melt at the temperature T, where a magnetic free energy difference ΔGbetween different crystallographic axes is greater than a thermal energy kT. While applying the magnetic field, the melt is cooled at a rate of about 30° C./min or higher, and the melt solidifies to form a single crystal of the material.


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