The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Dec. 17, 2013
Applicant:
Robert Bosch Gmbh, Stuttgart, DE;
Inventors:
Assignee:
Robert Bosch GmbH, Stuttgart, DE (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01); H01L 21/50 (2006.01); B81C 1/00 (2006.01); B81B 3/00 (2006.01); B81B 7/00 (2006.01); H01L 29/772 (2006.01); H01L 21/02 (2006.01); H01L 21/58 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00246 (2013.01); B81B 2201/0221 (2013.01); B81C 2203/0771 (2013.01);
Abstract
A semiconductor device includes a substrate, a first dielectric layer located above the substrate, a moving-gate transducer, and a proof mass. The moving-gate transducer is at least partially formed within the substrate and is at least partially formed within the first dielectric layer. The proof mass includes a portion of the first dielectric layer and a portion of a silicon layer. The silicon layer is located above the first dielectric layer.