The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2016

Filed:

Jun. 04, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Anthony R. Bonaccio, Shelburne, VT (US);

Zhenrong Jin, Essex Junction, VT (US);

Ram Kelkar, South Burlington, VT (US);

Anjali R. Malladi, Williston, VT (US);

Ramana M. Malladi, Williston, VT (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03B 5/08 (2006.01); H03F 1/26 (2006.01); H03B 5/12 (2006.01); H03B 5/10 (2006.01); H03B 5/34 (2006.01);
U.S. Cl.
CPC ...
H03F 1/26 (2013.01); H03B 5/10 (2013.01); H03B 5/1212 (2013.01); H03B 5/1225 (2013.01); H03B 5/1228 (2013.01); H03B 5/34 (2013.01); H03F 2200/372 (2013.01);
Abstract

An approach for a transconductance cell for use in a voltage controlled oscillator (VCO) is provided. The transconductance cell includes a first NFET stack connected in series to a first PFET stack. The transconductance cell includes a second NFET stack connected in series to a second PFET stack. The first NFET stack and the first PFET stack are cross-coupled to the second NFET stack and the second PFET stack. The first NFET stack and the second NFET stack are connected to a tail node. The first PFET stack and the second PFET stack are connected to a power supply node.


Find Patent Forward Citations

Loading…