The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Jun. 20, 2012
Brian Mott, Rochester, NY (US);
Imre Knausz, Rochester, NY (US);
Brian Mott, Rochester, NY (US);
Imre Knausz, Rochester, NY (US);
SYNAPTICS INCORPORATED, San Jose, CA (US);
Abstract
A voltage drive circuit is constructed by stacking NMOS and PMOS transistors to provide high voltage levels with an output voltage swing greater than the breakdown voltage of the individual transistors used to build the voltage drive circuit. The voltage drive circuit may include a series stack of capacitors connected between gates of the stacked PMOS and NMOS transistors. The capacitive loading causes the gate signals to change more synchronously. Errors in timing for these gate signals, which would otherwise result in damage from exceeding the breakdown voltage across a pair of terminals of one of the NMOS and PMOS transistors, are mollified.