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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9252562 B1

PDFFull Text
Date of Patent:
Feb. 02, 2016

Filed:

May. 12, 2014

Surface emitting semiconductor laser, surface emitting semiconductor laser array, surface emitting semiconductor laser device, optical transmission device, information processing apparatus, and method of producing surface emitting semiconductor laser

Applicant:

Fuji Xerox Co., Ltd., Tokyo, JP;

Inventors:

Junichiro Hayakawa, Kanagawa, JP;

Kazutaka Takeda, Kanagawa, JP;

Akemi Murakami, Kanagawa, JP;

Assignee:

FUJI XEROX CO., LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Peniel M Gumedzoe

Int. Cl.
CPC ...
H01S 5/024 (2006.01); H04B 10/50 (2013.01); H01S 5/183 (2006.01); G03G 15/04 (2006.01); H01S 5/42 (2006.01); H01L 33/64 (2010.01); H01L 33/10 (2010.01); H01L 33/38 (2010.01); H01L 33/06 (2010.01); H01L 33/04 (2010.01); H01S 5/042 (2006.01);
U.S. Cl.
CPC ...
H01S 5/02476 (2013.01); G03G 15/04072 (2013.01); H01S 5/18311 (2013.01); H01S 5/423 (2013.01); H04B 10/503 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 33/10 (2013.01); H01L 33/38 (2013.01); H01L 33/385 (2013.01); H01L 33/387 (2013.01); H01L 33/64 (2013.01); H01L 33/642 (2013.01); H01S 5/0425 (2013.01); H01S 5/18352 (2013.01);
Abstract

A surface emitting semiconductor laser includes a substrate, a first conductivity-type first semiconductor multilayer reflector, an active layer, a semiconductor layer, a second conductivity-type second semiconductor multilayer reflector that includes a current confinement layer, and a heat dissipating metal member. At least the first semiconductor multilayer reflector, the active layer, the semiconductor layer, and the second semiconductor multilayer reflector are stacked in this order on the substrate. A columnar structure having a top portion, a side surface, and a bottom portion is formed from the second semiconductor multilayer reflector to the semiconductor layer. The heat dissipating metal member is connected to the semiconductor layer exposed at the bottom portion of the columnar structure.

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