The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Aug. 15, 2014
Applicant:
SK Hynix Inc., Icheon-Si, KR;
Inventor:
Young-Ju Lee, Icheon-Si, KR;
Assignee:
SK hynix Inc., Icheon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01); H01L 45/00 (2006.01); G06F 12/08 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1675 (2013.01); G06F 12/0831 (2013.01); H01L 27/2463 (2013.01); H01L 45/12 (2013.01); H01L 45/1233 (2013.01); G06F 2212/621 (2013.01);
Abstract
Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: an interlayer dielectric layer formed over a substrate including first and second areas; a first contact plug contacted with the substrate through the interlayer dielectric layer of the second area; an anti-peeling layer formed over the interlayer dielectric layer including the first contact plug; a second contact plug contacted with the substrate through the anti-peeling layer and the interlayer dielectric layer in the first area; and a variable resistance pattern contacted with the second contact plug.