The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Oct. 17, 2011
Yunsheng HU, Beijing, CN;
Tao He, Beijing, CN;
Huaqiang He, Beijing, CN;
Weidong Zhuang, Beijing, CN;
Ronghui Liu, Beijing, CN;
Yuanhong Liu, Beijing, CN;
Nan LI, Beijing, CN;
Yunsheng Hu, Beijing, CN;
Tao He, Beijing, CN;
Huaqiang He, Beijing, CN;
Weidong Zhuang, Beijing, CN;
Ronghui Liu, Beijing, CN;
Yuanhong Liu, Beijing, CN;
Nan Li, Beijing, CN;
Abstract
Disclosed are a red light-emitting nitride material, a light-emitting part and a light-emitting device comprising the same. The General Formula of the light-emitting material is: M(Al,B)SiNO:Eu, R, wherein M is at least one of the alkaline earth metal elements Mg, Ca, Sr, Ba and Zn; R is at least one of the rare earth elements Y, La, Ce, Gd and Lu; and 0.9≦a<1.1, 0.9≦b≦1, 1≦c≦1.5, 2.5<d<5, 0<e<0.1, 0<m<0.05, 0<n<0.1 and 1<c/b<1.5. The light-emitting material can be effectively excited by a radiation light having a wavelength below 500 nm, and then emits a visible red light having a wide spectrum from 500 nm to 780 nm. The light-emitting material of the present disclosure has the characteristics of high light-emitting efficiency, good temperature properties and a wide half-width etc., and the material can be used alone or in combination with other light-emitting materials for making high performance light-emitting devices.