The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Aug. 05, 2011
Akihiro Isozaki, Kanagawa, JP;
Akira Inoue, Osaka, JP;
Atsushi Yamada, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Akihiro Isozaki, Kanagawa, JP;
Akira Inoue, Osaka, JP;
Atsushi Yamada, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Abstract
A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; an active layer regionwhich includes an m plane nitride semiconductor layer and which is interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; an n-type electrodewhich is electrically connected to the n-type nitride semiconductor layer; a p-type electrodewhich is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structurewhich is provided for the light-emitting face and which has a plurality of projections that run substantially parallel to the a-axis direction of the m plane nitride semiconductor layer.