The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Apr. 28, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Chul Min Kim, Gunpo-si, KR;
Tan Sakong, Seoul, KR;
Suk Ho Yoon, Seoul, KR;
Keon Hun Lee, Seoul, KR;
Do Young Rhee, Seoul, KR;
Sang Don Lee, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor light emitting device may include: a first conductivity type semiconductor layer; an active layer disposed on the first conductivity type semiconductor layer; an electron-blocking layer disposed on the active layer; a second conductivity type semiconductor layer disposed on the electron-blocking layer; and a hole-diffusion layer disposed between the electron-blocking layer and the second conductivity type semiconductor layer. The hole-diffusion layer may include three layers having different energy band gaps and different resistance levels and at least one of the three layers may contain Al. A composition of the Al may be lower in the at least one layer than in the electron-blocking layer.