The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Mar. 26, 2015
Applicant:
Nichia Corporation, Anan-shi, JP;
Inventor:
Atsuo Michiue, Anan, JP;
Assignee:
NICHIA CORPORATION, Anan-Shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 9/20 (2006.01); H01L 33/00 (2010.01); H01L 33/18 (2010.01);
U.S. Cl.
CPC ...
H01L 33/007 (2013.01); H01L 33/18 (2013.01);
Abstract
A first nitride semiconductor layer laminating step includes a first step and a second step. In the first step, an entire upper surface of the sapphire substrate is coated with a first nitride semiconductor layer, while supplying oxygen. In the second step, crystals of the first nitride semiconductor layer are grown by supplying oxygen at a smaller flow rate than that of oxygen supplied in the first step, or without supplying the oxygen.