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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9252322 B1

PDFFull Text
Date of Patent:
Feb. 02, 2016

Filed:

Oct. 26, 2012

Epitaxial film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illuminating device

Applicant:

Canon Anelva Corporation, Kanagawa, JP;

Inventors:

Yoshiaki Daigo, Kanagawa, JP;

Keiji Ishibashi, Kanagawa, JP;

Assignee:

Canon Anelva Corporation, Kawasaki-shi, JP;

Attorney:

Fitzpatrick, Cella, Harper & Scinto

Primary Examiner:

Victoria K Hall

Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 33/00 (2010.01); C23C 16/458 (2006.01); C30B 23/02 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 33/18 (2010.01);
U.S. Cl.
CPC ...
H01L 33/007 (2013.01); C23C 16/4586 (2013.01); C30B 23/02 (2013.01); C30B 29/403 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02631 (2013.01); H01L 33/18 (2013.01);
Abstract

The present invention provides: an epitaxial film forming method capable of fabricating a +c-polarity epitaxial film made of a Group III nitride semiconductor by sputtering; and a vacuum processing apparatus suitable for this epitaxial film forming method. In one embodiment of the present invention, a Group III nitride semiconductor thin film is epitaxially grown by sputtering on an α-AlOsubstrate heated to a desired temperature by using a heater. First, the α-AlOsubstrate is disposed on a substrate holder including the heater in such a way that the α-AlOsubstrate is disposed away from the heater by a predetermined distance. Then, an epitaxial film of a Group III nitride semiconductor thin film is formed on the α-AlOsubstrate in the state where the α-AlOsubstrate is disposed away from the heater by the predetermined distance.

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