The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2016

Filed:

Jun. 12, 2014
Applicants:

Paul Loscutoff, Castro Valley, CA (US);

David D. Smith, Campbell, CA (US);

Michael Morse, San Jose, CA (US);

Ann Waldhauer, La Honda, CA (US);

Taeseok Kim, San Jose, CA (US);

Steven Edward Molesa, San Jose, CA (US);

Inventors:

Paul Loscutoff, Castro Valley, CA (US);

David D. Smith, Campbell, CA (US);

Michael Morse, San Jose, CA (US);

Ann Waldhauer, La Honda, CA (US);

Taeseok Kim, San Jose, CA (US);

Steven Edward Molesa, San Jose, CA (US);

Assignee:

SunPower Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/028 (2006.01); H01L 31/0352 (2006.01); H01L 31/0224 (2006.01); H01L 31/0236 (2006.01); H01L 31/0368 (2006.01); H01L 31/0384 (2006.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/182 (2013.01); H01L 31/028 (2013.01); H01L 31/02363 (2013.01); H01L 31/022441 (2013.01); H01L 31/0352 (2013.01); H01L 31/03682 (2013.01); H01L 31/03845 (2013.01); H01L 31/0682 (2013.01); H01L 31/18 (2013.01); H01L 31/1804 (2013.01); Y02E 10/50 (2013.01); Y10S 977/939 (2013.01); Y10S 977/948 (2013.01);
Abstract

Methods of fabricating solar cell emitter regions using silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a region of doped silicon nano-particles above a dielectric layer disposed above a surface of a substrate of the solar cell. A layer of silicon is formed on the region of doped silicon nano-particles. At least a portion of the layer of silicon is mixed with at least a portion of the region of doped silicon nano-particles to form a doped polycrystalline silicon layer disposed on the dielectric layer.


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