The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2016

Filed:

Apr. 03, 2015
Applicant:

Solar Junction Corporation, San Jose, CA (US);

Inventors:

Rebecca Elizabeth Jones-Albertus, Washington, DC (US);

Homan Bernard Yuen, Santa Clara, CA (US);

Ting Liu, San Jose, CA (US);

Pranob Misra, Santa Clara, CA (US);

Assignee:

Solar Junction Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/0735 (2012.01); C22C 28/00 (2006.01); H01L 31/18 (2006.01); H01L 31/0304 (2006.01); H01L 31/078 (2012.01); H01L 31/0725 (2012.01); C22C 30/00 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0735 (2013.01); C22C 28/00 (2013.01); C22C 30/00 (2013.01); H01L 31/0304 (2013.01); H01L 31/03048 (2013.01); H01L 31/078 (2013.01); H01L 31/0725 (2013.01); H01L 31/1848 (2013.01); Y02E 10/544 (2013.01); Y10T 428/12 (2015.01);
Abstract

An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, GaInNAsSbwith a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for GaInNAsSbare 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.


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