The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Aug. 24, 2012
Mitsuaki Morigami, Izumiotsu, JP;
Yuji Hishida, Osaka, JP;
Daisuke Ide, Kobe, JP;
Hitoshi Sakata, Higashi-Osaka, JP;
Takahiro Mishima, Kobe, JP;
Hiroyuki Mori, Kaiduka, JP;
Masato Shigematsu, Osaka, JP;
Mitsuaki Morigami, Izumiotsu, JP;
Yuji Hishida, Osaka, JP;
Daisuke Ide, Kobe, JP;
Hitoshi Sakata, Higashi-Osaka, JP;
Takahiro Mishima, Kobe, JP;
Hiroyuki Mori, Kaiduka, JP;
Masato Shigematsu, Osaka, JP;
Abstract
A solar cell includes semiconductor substrate of a first conductivity type; first semiconductor layer having a first conductivity type; second semiconductor layer having a second conductivity type; first electrode; second electrode; and insulating layer. First semiconductor layer and second semiconductor layer are formed on rear surface. When one end portion of insulating layer which is formed on first semiconductor layer and which is on a side close to first electrode is defined as first insulating-layer end portion and another end portion of insulating layer on a side close to second electrode is defined as second insulating-layer end portion in arrangement direction x, a distance from end point of second-semiconductor-layer end portion in contact with rear surface to second insulating-layer end portion in arrangement direction x is shorter than a distance from end point to first insulating-layer end portion in arrangement direction x.