The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Sep. 10, 2013
Ams Ag, Unterpremstaetten, AT;
Jordi Teva, Veldhoven, NL;
ams AG, Unterpremstaetten, AT;
Abstract
The photodiode device comprises a doped region () contiguous with a contact region () of the same conductivity type located at the substrate surface (), an appertaining anode or cathode connection (), a further contact region () of an opposite conductivity type at the substrate surface, and a further anode or cathode connection (). The contact region () is arranged at least on opposite sides of an active area of the substrate surface that covers the further contact region (). A lateral pn junction () and an associated space charge region is formed at the substrate surface by a boundary of one of the contact regions, the boundary facing the other contact region. A field electrode () is arranged above the lateral pn junction, separated from the lateral pn junction by a dielectric material (), and is provided with a further electrical connection () separate from the anode and cathode connections. By the field electrode (), the space charge region at the surface () is reduced and the peripheral dark current of the photodiode decreases considerably.