The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Dec. 04, 2012
Applicant:
Epistar Corporation, Hsinchu, TW;
Inventors:
Yi-Hung Lin, Hsinchu, TW;
Cheng-Hong Chen, Hsinchu, TW;
Assignee:
EPISTAR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/0735 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02168 (2013.01); H01L 31/022425 (2013.01); H01L 31/0735 (2013.01); H01L 31/1888 (2013.01); Y02E 10/50 (2013.01);
Abstract
An optoelectronic device comprises an optoelectronic semiconductor stack layer; a conductive layer on the optoelectronic semiconductor stack layer, the conductive layer comprising a top surface, a bottom surface opposite to the top surface, and a side surface; a first barrier layer covering the top surface; a second barrier layer covering the bottom surface; and a first metal oxide layer, wherein the first metal oxide layer covers the side surface, the first barrier layer, and the second barrier layer.