The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Aug. 23, 2012
Masahiro Watanabe, Tochigi, JP;
Mitsuo Mashiyama, Oyama, JP;
Takuya Handa, Tochigi, JP;
Kenichi Okazaki, Tochigi, JP;
Masahiro Watanabe, Tochigi, JP;
Mitsuo Mashiyama, Oyama, JP;
Takuya Handa, Tochigi, JP;
Kenichi Okazaki, Tochigi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawaken, JP;
Abstract
To provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and has high reliability. To provide a method for manufacturing the semiconductor device. The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, an oxide semiconductor film formed over the gate insulating film, a source electrode and a drain electrode formed over the oxide semiconductor film, and a protective film. The protective film includes a metal oxide film, and the metal oxide film has a film density of higher than or equal to 3.2 g/cm.