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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9252266 B1

PDFFull Text
Date of Patent:
Feb. 02, 2016

Filed:

Jun. 20, 2013

Wide band gap semiconductor device and method for producing the same

Applicant:

Fuji Electric Co., Ltd., Kawasaki-ku, Kawasaki-shi, JP;

Inventor:

Noriyuki Iwamuro, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;

Attorney:

Rossi, Kimms & McDowell LLP

Primary Examiner:

Laura Menz

Assistant Examiner:

Candice Y Chan

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/401 (2013.01); H01L 29/66068 (2013.01); H01L 29/66734 (2013.01); H01L 29/7806 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/7839 (2013.01); H01L 29/0623 (2013.01); H01L 29/0653 (2013.01); H01L 29/0657 (2013.01); H01L 29/0661 (2013.01); H01L 29/0696 (2013.01); H01L 29/41766 (2013.01); H01L 29/45 (2013.01); H01L 29/452 (2013.01); H01L 29/47 (2013.01); H01L 29/475 (2013.01);
Abstract

A wide band gap semiconductor device is disclosed. A first trench in a gate electrode part and second trench in a source electrode part (Schottky diode) are disposed close to each other, and the second trench is deeper than the first trench. A metal electrode is formed in the second trench to form a Schottky junction on a surface of an n-type drift layer in the bottom of the second trench. Further, a p+-type region is provided in part of the built-in Schottky diode part being in contact with the surface of the n-type drift layer, preferably in the bottom of the second trench. The result is a small wide band gap semiconductor device which is low in on-resistance and loss. Electric field concentration applied on a gate insulating film is relaxed to suppress lowering of withstand voltage and increase avalanche breakdown tolerance at turning-off time.

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