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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9252262 B1

PDFFull Text
Date of Patent:
Feb. 02, 2016

Filed:

Jan. 06, 2015

Semiconductor device including semiconductor chip having epitaxial layer

Applicant:

Renesas Electronics Corporation, Kawasaki, JP;

Inventors:

Satoshi Eguchi, Kawasaki, JP;

Yoshito Nakazawa, Kawasaki, JP;

Assignee:

Renesas Electronics Corporation, Kawasaki-Shi, Kanagawa, JP;

Attorney:

McGinn IP Law Group, PLLC

Primary Examiner:

Joseph Schoenholtz

Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 29/38 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 29/165 (2006.01); H01L 29/16 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7811 (2013.01); H01L 29/0634 (2013.01); H01L 29/16 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/7395 (2013.01); H01L 29/861 (2013.01); H01L 21/26506 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/66712 (2013.01);
Abstract

The reliability of a semiconductor device including a power semiconductor element is improved. The basic idea in embodiments is to make the band gap of a cell region smaller than the band gap of a peripheral region. Specifically, a lower band gap region having a smaller band gap than the band gap of an epitaxial layer is formed in the cell region. In addition, a higher band gap region having a larger band gap than the band gap of the epitaxial layer is formed in the peripheral region.

Find Patent Forward Citations

Eguchi, Satoshi. (2016). Semiconductor device including semiconductor chip having epitaxial layer (U.S. Patent No. 9252262). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9252262

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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