The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Oct. 16, 2013
Applicant:
SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;
Inventor:
Min Sung Ko, Icheon-si, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 27/115 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/513 (2013.01); H01L 27/11582 (2013.01); H01L 29/66833 (2013.01); H01L 21/28282 (2013.01);
Abstract
A semiconductor device and a method of manufacturing the same are provided. The device includes insulating patterns and conductive patterns stacked alternately, a channel layer formed through the insulating patterns and the conductive patterns, a tunnel insulating layer formed to surround sidewalls of the channel layer, and a charge storage layer formed to surround the tunnel insulating layer. An interfacial surface of the tunnel insulating layer in contact with the charge storage layer includes a thermal oxide layer.