The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Jan. 05, 2015
Lg Electronics Inc., Seoul, KR;
Junho Kim, Seoul, KR;
Seongmoo Cho, Seoul, KR;
Taehoon Jang, Seoul, KR;
Eujin Hwang, Seoul, KR;
Jaemoo Kim, Seoul, KR;
LG Electronics Inc., Seoul, KR;
Abstract
A nitride semiconductor power device includes an AlGaN multilayer, which has changeable Al composition along a depositing direction, and SiNy layer, so as to minimize an increase in a leakage current and a decrease in a breakdown voltage, which are caused while fabricating a heterojunction type HFET device. A semiconductor device includes a buffer layer, an AlGaN multilayer formed on the buffer layer, a GaN channel layer formed on the AlGaN multilayer, and an AlGaN barrier layer formed on the AlGaN multilayer, wherein aluminum (Al) composition of the AlGaN multilayer changes along a direction that the AlGaN multilayer is deposited.