The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2016

Filed:

Apr. 02, 2014
Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Jae Hoon Park, Suwon-Si, KR;

Ji Hye Kim, Suwon-Si, KR;

Kyu Hyun Mo, Suwon-Si, KR;

Dong Soo Seo, Suwon-Si, KR;

In Hyuk Song, Suwon-Si, KR;

Assignee:

SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/739 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 29/1095 (2013.01); H01L 29/7397 (2013.01);
Abstract

A power semiconductor device may include: an active region in which a current flows through a channel formed when the device being turned on; a termination region disposed around the active region; a first semiconductor region of a first conductive type disposed in the termination region in a direction from the active region to the termination region; and a second semiconductor region of a second conductive type disposed in the termination region in the direction from the active region to the termination region, the first semiconductor region and the second semiconductor region being disposed alternately.


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