The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Jun. 04, 2015
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Michio Nemoto, Higashi-Chikuma-gun, JP;
Takashi Yoshimura, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-shi, JP;
Abstract
A p anode layer is formed on one main surface of an ndrift layer. Ncathode layer having an impurity concentration more than that of the ndrift layer is formed on the other main surface. An anode electrode is formed on the surface of the p anode layer. A cathode electrode is formed on the surface of the ncathode layer. N-type broad buffer region having a net doping concentration more than the bulk impurity concentration of a wafer and less than the ncathode layer and p anode layer is formed in the ndrift layer. Resistivity ρof the ndrift layer satisfies 0.12V≦ρ≦0.25Vwith respect to rated voltage V. Total amount of net doping concentration of the broad buffer region is equal to or more than 4.8×10atoms/cmand equal to or less than 1.0×10atoms/cm.