The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2016

Filed:

Oct. 23, 2014
Applicant:

Renesas Electronics Corporation, Kawasaki-shi, JP;

Inventors:

Shinpei Watanabe, Kawasaki, JP;

Shinichi Uchida, Kawasaki, JP;

Tadashi Maeda, Kawasaki, JP;

Shigeru Tanaka, Kawasaki, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Kawasaki-Shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H04B 5/00 (2006.01); H01L 23/522 (2006.01); H01L 23/64 (2006.01); H01L 27/06 (2006.01); H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 23/62 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 28/10 (2013.01); H01L 23/49575 (2013.01); H01L 23/5227 (2013.01); H01L 23/62 (2013.01); H01L 23/645 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 27/0617 (2013.01); H04B 5/005 (2013.01); H01L 23/3185 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/73215 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/92147 (2013.01); H01L 2224/92247 (2013.01); H01L 2924/1206 (2013.01); H01L 2924/19042 (2013.01);
Abstract

In a first semiconductor chip, a first multilayer interconnect layer is formed on a first substrate, and a first inductor is formed in the first multilayer interconnect layer. In a second semiconductor chip, a second multilayer interconnect layer is formed on a second substrate. A second inductor is formed in the second multilayer interconnect layer. The first semiconductor chip and the second semiconductor chip overlap each other in a direction in which the first multilayer interconnect layer and the second multilayer interconnect layer face each other. In addition, the first inductor and the second inductor overlap each other when seen in a plan view. At least one end of a first insulating film does not overlap the end of a facing region, in a Y direction.


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