The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2016

Filed:

Nov. 03, 2014
Applicant:

SK Hynix Inc., Icheon, KR;

Inventor:

Hyun Jin Lee, Icheon, KR;

Assignee:

SK HYNIX INC., Icheon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2481 (2013.01); H01L 45/1233 (2013.01); H01L 45/1683 (2013.01);
Abstract

A method of fabricating a semiconductor device is provided. The method includes an intermediate pattern structure on a substrate. The intermediate pattern structure includes a pair of first conductive lines extending in a first direction, a pair of first conductive connectors connecting end portions the pair of first conductive lines to each other, a pair of second conductive lines intersecting the pair of first conductive lines, and a pair of second conductive connectors connecting end portions of the pair of second conductive lines to each other. The first and second conductive connectors are selectively removed using a cut mask pattern to separate the pair of first conductive lines from each other and to separate the pair of second conductive lines from each other.


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