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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9252144 B1

PDFFull Text
Date of Patent:
Feb. 02, 2016

Filed:

Feb. 06, 2015

Field effect transistor and a device element formed on the same substrate

Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, JP;

Inventor:

Akihiro Jonishi, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., , JP;

Attorney:

Rossi, Kimms & McDowell LLP

Primary Examiner:

Ngan Ngo

Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 27/06 (2006.01); H01L 29/735 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 49/02 (2006.01); H01L 29/10 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0635 (2013.01); H01L 27/092 (2013.01); H01L 28/20 (2013.01); H01L 29/063 (2013.01); H01L 29/0634 (2013.01); H01L 29/1095 (2013.01); H01L 29/735 (2013.01); H01L 29/7823 (2013.01);
Abstract

An ntype diffusion region surrounds a high side well region and is electrically isolated from a low side region. In the ndiffusion region formed are a first p type diffusion region and the second p type diffusion region separated with each other. The first p type diffusion region composes a double RESURF structure in an nch MOSFET in the level shift-up circuit, and in a high voltage junction terminating structure. The second p type diffusion region composes a double RESURF structure of a pch MOSFET of a level shift-down circuit. The impurity concentration of the ntype diffusion region is in the range of 1.3×10/cmto 2.8×10/cm. The impurity concentration of the first p type diffusion region and the impurity concentration of the second p type diffusion region are in the range of 1.1×10/cmto 1.4×10/cm.

Find Patent Forward Citations

Jonishi, Akihiro. (2016). Field effect transistor and a device element formed on the same substrate (U.S. Patent No. 9252144). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9252144

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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