The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Nov. 06, 2013
Applicants:
Kyoung Hun Shin, Uiwang-si, KR;
Kyu Bong Kim, Uiwang-si, KR;
Hyun Joo Seo, Uiwang-si, KR;
Young Ju Shin, Uiwang-si, KR;
Woo Jun Lim, Uiwang-si, KR;
Inventors:
Kyoung Hun Shin, Uiwang-si, KR;
Kyu Bong Kim, Uiwang-si, KR;
Hyun Joo Seo, Uiwang-si, KR;
Young Ju Shin, Uiwang-si, KR;
Woo Jun Lim, Uiwang-si, KR;
Assignee:
CHEIL INDUSTRIES, INC., Gumi-si, Gyeongsangbuk-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/29 (2013.01); H01L 24/27 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 2224/2784 (2013.01); H01L 2224/27502 (2013.01); H01L 2224/294 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/2939 (2013.01); H01L 2224/2949 (2013.01); H01L 2224/29082 (2013.01); H01L 2224/29291 (2013.01); H01L 2224/29311 (2013.01); H01L 2224/29316 (2013.01); H01L 2224/29324 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/29344 (2013.01); H01L 2224/29347 (2013.01); H01L 2224/29355 (2013.01); H01L 2224/29364 (2013.01); H01L 2224/29366 (2013.01); H01L 2224/29371 (2013.01); H01L 2224/29386 (2013.01); H01L 2224/29393 (2013.01); H01L 2224/29499 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/8388 (2013.01); H01L 2224/83101 (2013.01); H01L 2224/83855 (2013.01); H01L 2224/83885 (2013.01); H01L 2924/07811 (2013.01); H01L 2924/20104 (2013.01); H01L 2924/20105 (2013.01);
Abstract
A semiconductor device connected by an anisotropic conductive film, the film having a storage modulus of 100 MPa to 300 MPa at 40° C. after curing of the film, and a peak point of 80° C. to 90° C. in a DSC (Differential Scanning calorimeter) profile of the film.