The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Aug. 07, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Jeong-Kil Lee, Incheon, KR;
Chan-Ho Park, Seongnam-si, KR;
Nam-Ki Cho, Goyang-si, KR;
Won-Sang Choi, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/02 (2006.01); H01L 23/544 (2006.01); H01L 21/762 (2006.01); H01L 21/283 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 21/283 (2013.01); H01L 21/76224 (2013.01); H01L 2223/5446 (2013.01); H01L 2223/54426 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device includes preparing a substrate in which a scribe lane region and a chip region are defined, forming a trench in the scribe lane region of the substrate, forming a stopper layer in a part in the trench, and forming an alignment mark material on the stopper layer.