The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Mar. 14, 2013
Applicant:
Ps4 Luxco S.a.r.l., Luxembourg, LU;
Inventor:
Akira Ide, Tokyo, JP;
Assignee:
PS4 Luxco S.a.r.l., Luxembourg, LU;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/48 (2006.01); H01L 23/544 (2006.01); H01L 25/065 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49811 (2013.01); H01L 23/3135 (2013.01); H01L 23/481 (2013.01); H01L 23/544 (2013.01); H01L 25/0657 (2013.01); H01L 23/3128 (2013.01); H01L 23/49816 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54473 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16146 (2013.01); H01L 2225/0652 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06551 (2013.01); H01L 2225/06565 (2013.01);
Abstract
Disclosed herein is a device that includes: a semiconductor substrate; plurality of first through-substrate vias each penetrating through the semiconductor substrate, a plurality of second through-substrate vias each penetrating through the semiconductor substrate, an insulating film formed over the semiconductor substrate, the insulating film including a first opening and a plurality of second openings, the first opening being located over the first through-substrate vias, and each of the second openings being located over a corresponding one of the second through-substrate vias.