The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Apr. 07, 2014
Applicant:
Kichul Chun, Seongnam-si, KR;
Inventor:
Kichul Chun, Seongnam-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); H03K 19/003 (2006.01); H03K 19/00 (2006.01); H01L 27/092 (2006.01); G05F 3/20 (2006.01); H02M 3/07 (2006.01); G11C 29/02 (2006.01);
U.S. Cl.
CPC ...
G11C 5/146 (2013.01); G05F 3/205 (2013.01); G11C 5/147 (2013.01); H01L 27/092 (2013.01); H02M 3/073 (2013.01); H03K 19/0013 (2013.01); H03K 19/0016 (2013.01); H03K 19/00315 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01);
Abstract
A semiconductor memory device is provided which includes a function block including a plurality of transistors; a body bias control unit configured to detect a command and to generate a body bias selection signal according to the detection result; and a body bias generator configured to generate a body voltage according to the body bias selection signal and to provide the body voltage to bodies of the plurality of transistors, wherein the body bias generator down-converts a power supply voltage supplied from an external device to generate the body voltage.