The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Dec. 27, 2012
The University of Tokyo, Tokyo, JP;
Omron Corporation, Kyoto-shi, JP;
Isao Shimoyama, Tokyo, JP;
Kiyoshi Matsumoto, Tokyo, JP;
Yusuke Takei, Tokyo, JP;
Hidetoshi Takahashi, Tokyo, JP;
Noboru Kiga, Tokyo, JP;
Masahito Honda, Tokyo, JP;
The University of Tokyo, Tokyo, JP;
Omron Corporation, Kyoto-shi, JP;
Abstract
A gas sensor that can enhance gas detection sensitivity more than the conventional sensors with a simple configuration is proposed. An electric double layer including a gate insulating layer is formed in an ionic liquid (IL), a change of a state of the gate insulating layer in the ionic liquid (IL) that occurs by absorbing a gas is directly reflected in a source-drain current (I) that flows in a carbon nanotube (). Therefore, the gas detection sensitivity can be enhanced more than in the conventional sensors. Further, since the ionic liquid (IL) can be simply provided on a substrate () to be in contact with the carbon nanotube () and a gate electrode (), the configuration that chemically modifies a surface of the carbon nanotube with a plurality of polymers as in the conventional gas sensors is not needed, and the configuration can be simplified correspondingly.