The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2016

Filed:

Dec. 22, 2014
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Kazuo Kokumai, Atsugi, JP;

Yusuke Onuki, Fujisawa, JP;

Hiroaki Naruse, Oita, JP;

Masashi Kusukawa, Sagamihara, JP;

Katsunori Hirota, Yamato, JP;

Nobuyuki Endo, Fujisawa, JP;

Kazuo Yamazaki, Yokohama, JP;

Hiroaki Kobayashi, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/378 (2011.01); H01L 27/146 (2006.01); H04N 5/3745 (2011.01);
U.S. Cl.
CPC ...
H04N 5/378 (2013.01); H01L 27/14612 (2013.01); H01L 27/14643 (2013.01); H04N 5/3745 (2013.01);
Abstract

Each of a plurality of pixel circuits is an insulated gate transistor and includes a first kind transistor having a maximum value of a gate potential difference to be applied equal to or higher than a first value. Each of a plurality of analog signal processing circuits is an insulated gate transistor and includes a second kind transistor having a maximum value of a gate potential difference to be applied equal to or lower than a second value that is lower than the first value. Each of a plurality of analog signal processing circuits does not include an insulated gate transistor having a maximum value of a gate potential difference to be applied not higher than the second value.


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