The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2016

Filed:

Jun. 25, 2013
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Takeshi Fujioka, Fukuoka, JP;

Tomoki Kurose, Kanagawa, JP;

Hiroaki Tanaka, Kanagawa, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/367 (2011.01); H01L 27/148 (2006.01); H04N 5/3728 (2011.01); H04N 5/361 (2011.01); H04N 5/378 (2011.01); H04N 5/232 (2006.01);
U.S. Cl.
CPC ...
H04N 5/367 (2013.01); H01L 27/14812 (2013.01); H01L 27/14831 (2013.01); H04N 5/23293 (2013.01); H04N 5/361 (2013.01); H04N 5/378 (2013.01); H04N 5/3728 (2013.01);
Abstract

The present technology relates to a solid-state image sensor, a solid-state imaging device, and a camera device capable of making white flaws unnoticeable even with a reduced cell size. The solid-state image sensor includes: a register unit formed as an n-type impurity region extending in a first direction; a reading unit configured to read charge from the photoelectric conversion unit into the register unit and formed as a p-type impurity region extending in the same direction as the register unit; a horizontal element isolation unit configured to prevent leakage of charge from the photoelectric conversion unit and formed as a p-type impurity region extending in the same direction as the register unit; and multiple transfer electrodes configured to apply voltage for changing potential distribution of the register unit, wherein a total amount of n-type impurity forming the register unit below a low-level electrode having a standby voltage of a predetermined low value among the transfer electrodes is smaller than a total amount of n-type impurity forming the register unit below a middle-level electrode having a standby voltage higher than the predetermined low value.


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